, li ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1940 description ? low collector saturation voltage- : vce(sa.)= -2.0v(min) @lc= -6a ? good linearity of hfe ? complement to type 2sc51 97 applications ? power amplifier applications ? recommend for 55w high fidelity audio frequency amplifier output stage applications absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation tc=25 c junction temperature storage temperature range value -120 -120 -5 -8 -0.8 80 150 -55-150 unit v v v a a w ?c c 1 r * 1 2 3 2 pin 1.base 2. collector 3.bmitter to-3pi package 1 t \ *l *t 'f1 h._ '? ^__ 1 c > 0 if, f } 1 .^ u-n n ^ v, i \ i ? ? ? v dim a b c d f h j k l n u h s t li z c ml _ ~ta -?>? r -*- i~? - > \m win 19.90 15.50 4.40 0.90 3.20 2.90 0.50 19.90 1.90 10.80 4.40 3.50 1.40 1.00 2.10 8.90 max 20.10 15.70 4.60 1.10 3,40 3.10 0.70 20.10 2.10 11,00 4.60 3.35 1.60 1.20 2.30 9.10 ;j ? _ ii | ii j nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time or"going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verity that datasheets are current before placing orders. qualify semi-conductors
silicon pnp power transistor 2SA1940 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo vce(sat) vee(on) icbo iebo hpe-1 hfe-2 cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions ig= -50ma ; ib= 0 |c= -6a; ib= -0.6a |c= -4a ; vce= -5v vcb=-120v;ie=0 veb= -5v; lc=0 lc=-1a;vce=-5v lc= -4a ; vce= -5v le=0;vcb=-10v;ftes,= 1.0mhz lc=-1a; vce=-5v min -120 55 35 typ. 260 30 max -2.0 -1.5 -5 -5 160 unit v v v ua ua pf mhz hfe.i classifications r 55-110 o 80-160
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